STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a storage device with a high reliability and a method of manufacturing the same.

SOLUTION: The method of manufacturing the semiconductor device according to an embodiment comprises the steps of: forming a nanomaterial assembly layer formed of a plurality of minute conductors assembled with gaps in between; forming a first electrode layer by depositing a conductive material on the nanomaterial assembly layer by means of a first method by which a coverage becomes relatively low; and forming a second electrode layer by depositing a conductive material on the first electrode layer by means of a second method by which a coverage becomes relatively high.

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