发明名称 METAL CONTACT OF PHOTOVOLTAIC DEVICE AND LOW TEMPERATURE MANUFACTURING PROCESS THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a photovoltaic device having high performance when compared with a conventional solar cell, and to provide a method for manufacturing the photovoltaic device at a low cost. <P>SOLUTION: The present invention relates to a photovoltaic device, to a metal contact arranged in a photovoltaic device such as a photocell, and to a manufacturing process for forming the metal contact. The metal contact contains a palladium germanium alloy formed at a low temperature during an annealing process. In some embodiments, the photocell is heated at a temperature of about 20 to about 275&deg;C, e.g. at about 150&deg;C, for about 30 minutes during the annealing process. In another embodiment, the photocell is heated at a temperature of about 150 to about 275&deg;C for at least about 0.5 minutes during the annealing process. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012099806(A) 申请公布日期 2012.05.24
申请号 JP20110226920 申请日期 2011.10.14
申请人 ALTA DEVICES INC 发明人 BRENDAN M KAYES;KIZILYALLI ISIK C;HUI NIE;MELISSA J ARCHER
分类号 H01L31/04 主分类号 H01L31/04
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