MEMORY SYSTEM WITH REVERSIBLE RESISTIVITY-SWITCHING USING PULSES OF ALTERNATE POLARITY
摘要
<p>A memory system includes a plurality of non-volatile storage elements that each comprise a diode (or other steering device) in series with reversible resistance-switching material. One or more circuits in the memory system program the non-volatile storage elements by changing the reversible resistance-switching material of one or more non-volatile storage elements to a first resistance state. The memory system can also change the reversible resistance-switching material of one or more of the non-volatile storage elements from the first resistance state to a second resistance state by applying one or more pairs of opposite polarity voltage conditions (e.g., pulses) to the respective diodes (or other steering devices) such that current flows in the diodes (or other steering devices) without operating the diodes (or other steering devices) in breakdown condition.</p>
申请公布号
WO2012067738(A1)
申请公布日期
2012.05.24
申请号
WO2011US56130
申请日期
2011.10.13
申请人
SANDISK 3D LLC;RABKIN, PETER;SAMACHISA, GEORGE;SCHEUERLEIN, ROY, E.
发明人
RABKIN, PETER;SAMACHISA, GEORGE;SCHEUERLEIN, ROY, E.