| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of easily turning on a transistor and capable of achieving excellent data retention characteristics, and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor device comprises: first element separation regions 14 that are formed on a semiconductor substrate 12, are composed of first element separation trenches 51 extending in a first direction and element separation insulating films 53 filling the first element separation trenches 51, and partition active regions 16 having a plurality of element formation regions R; and second element separation regions 17 that are formed so as to extend in a second direction (Y direction) crossing the first direction on the semiconductor substrate 12, are composed of second element separation trenches 54 dividing a portion of the first element separation regions 14 and second element insulating films 56 filing the second element separation trenches 54, and partition a plurality of the element formation regions R. <P>COPYRIGHT: (C)2012,JPO&INPIT |
