| 摘要 |
PURPOSE: A semiconductor device which includes a metal oxide semiconductor transistor is provided to change the shape of a gate of the transistor which has a biggest line width within a dummy pattern, thereby preventing collapse or deformation of a transistor pattern which has a small gate line width. CONSTITUTION: A gate line width(L21) of a first MOS(Metal Oxide Semiconductor) transistor(T21) is formed smaller than a gate line width(L20) of a second MOS transistor(T22). First and second MOS transistors respectively include first and second active regions(220,240). The first MOS transistor comprises a pair of first sources and a first drain(S21,D21). The first source and the first drain are electrically connected to a data input/output line by contacts(222,224) which are respectively formed on the first source and the first drain. The second MOS transistor comprises a pair of second sources and a second drain(S22,D22).
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