Memory devices and methods of forming the same

摘要

Memory devices having a plurality of memory cells (4), with each memory cell including a phase change material (2) having a laterally constricted portion there- of. The laterally constricted portions of adjacent memory cells are vertically offset and positioned on opposite sides of the memory device. Also disclosed are memory devices having a plurality of memory cells, with each memory cell including first and second electrodes having different widths. Adjacent memory cells have the first and second electrodes offset on vertically opposing sides of the memory device. Methods of forming the memory devices are also disclosed.