Termination and contact structures for a high voltage GaN-based heterojunction transistor

摘要

A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. The second active layer includes first and second recesses formed therein. Source and drain contacts are disposed in the first and second recesses respectively. A gate electrode is disposed over the second active layer.