发明名称 Barrier layer for fine-pitch mask-based substrate bumping
摘要 A structure that may be used in substrate solder bumping comprises a substrate (110), a solder resist layer (120) disposed over the substrate, a plurality of solder resist openings (121) in a surface (122) of the solder resist layer, a conformal barrier layer (130) having a first portion (131) over the surface of the solder resist layer and a second portion (132) in the solder resist openings, a mask layer (140) over the first portion of the conformal barrier layer, and a solder material (150) in the solder resist openings over the metal layer. The conformal barrier layer acts as a barrier against interaction between the solder resist layer and the mask layer during solder reflow.
申请公布号 US8183692(B2) 申请公布日期 2012.05.22
申请号 US20100835940 申请日期 2010.07.14
申请人 NALLA RAVI K.;TSAU CHRISTINE H.;HLAD MARK S.;INTEL CORPORATION 发明人 NALLA RAVI K.;TSAU CHRISTINE H.;HLAD MARK S.
分类号 H01L21/44 主分类号 H01L21/44
代理机构 代理人
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