| 摘要 |
<p>A method for manufacturing a semiconductor device, includes: providing a first conductivity-type bulk doped semiconductor substrate with a first surface and a second surface opposite thereto; removing the native oxide on at least one of the first and the second surface to expose the semiconductor material; by chemical vapor deposition using a boron precursor gas forming a layer of amorphous boron on top of the exposed semiconductor material such that an effective p++ type layer is formed.</p> |
