MANUFACTURING METHOD OF METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metal wiring formation method of a semiconductor device is provided to suppress formation of a silicon oxy-nitride layer, thereby preventing bridge formation due to a polymer. CONSTITUTION: A first adhesive layer(110) is formed on an interlayer insulating film(100). A metal layer(120) is formed on the first adhesive layer. The metal layer is formed with an aluminum layer which has a thickness in a range of 6000 to 8000Å. A second adhesive layer(130) is formed on the upper part of the metal layer. A titanium nitride layer(132) is formed on the uppermost part of the second adhesive layer.