| 发明名称 |
Semiconductor material and method of production |
| 摘要 |
<p>A method of manufacturing (AgxCu1-x)2ZnSn(SySe1-y)4 thin films, the method comprising: providing a thin film comprising Ag and/or Cu, the thin film further comprising Zn; and annealing the thin film in an atmosphere comprising S and/or Se, and further comprising Sn.</p> |
| 申请公布号 |
LU91754(A1) |
申请公布日期 |
2012.05.21 |
| 申请号 |
LU20100091754 |
申请日期 |
2010.11.18 |
| 申请人 |
UNIVERSITE DU LUXEMBOURG;TDK CORPORATION |
发明人 |
DOMINIK BERG;PHILLIP DALE;ALEX REDINGER;SUSANNE SIEBENTRITT |
| 分类号 |
C23C14/06;C23C14/58;C25D5/50;H01L31/032 |
主分类号 |
C23C14/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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