| 摘要 |
<p>#CMT# #/CMT# The method involves simultaneously forming a set of openings i.e. trenches (103, 105), forming a closed circular contour and another set of openings i.e. holes (102, 104), formed inside the closed contour, on a substrate (100) that is made of conductive or semi-conductor material, where the two sets of openings are separated by a substrate zone. The two sets of openings are filled with dielectric material and conductive material e.g. metal, and semi-conductor and metal alloy such as semi-conductor and metal silicide, respectively. #CMT# : #/CMT# The metal is chosen from a group comprising tungsten, copper, titanium, nickel, platinum or cobalt. The semi-conductor and metal silicide is chosen from a group comprising tungsten silicide, titanium silicide, nickel silicide, platinum silicide or cobalt silicide. #CMT#USE : #/CMT# Method for forming a through silicon via interconnection structure in a microelectronic chip of a radiofrequency circuit and in microsystem field. #CMT#ADVANTAGE : #/CMT# The method permits formation of an insulation zone separated from a conduction zone so as to assure better insulation quality and limit the capacitive effect of the structure. The two sets of openings are easily filled with dielectric material and conductive material, respectively, thus forming the through silicon via interconnection structure in an efficient manner. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic sectional view illustrating a method for forming a through silicon via interconnection structure. 100 : Substrate 102, 104 : Holes 103, 105 : Trenches 107 : Masking layer 109 : Resin layer.</p> |
