发明名称 FLUORSPAR/IODIDE PROCESS FOR SILICON PURIFICATION
摘要 Method and apparatus for producing molten purified crystalline silicon from low- grade siliceous fluorspar ore, sulfur trioxide gas, and a metallic iodide salt. Method involves: (1) initially reacting silicon dioxide-bearing fluorspar ore and sulfur trioxide gas in sulfuric acid to create silicon tetrafluoride gas and fluorogypsum; (2) reacting the product gas with a heated iodide salt to form a fluoride salt and silicon tetraiodide; (3) isolating silicon tetraiodide from impurities and purifying it by washing steps and distillation in a series of distillation columns; (4) heating the silicon tetraiodide to its decomposition temperature in a silicon crystal casting machine, producing pure molten silicon metal ready for crystallization; and pure iodine gas, extracted as liquid in a cold-wall chamber. The system is batch process-based, with continuous elements. The system operates largely at atmospheric pressure, requiring limited inert gas purges during batch changes.
申请公布号 WO2012044349(A3) 申请公布日期 2012.05.18
申请号 WO2011US01687 申请日期 2011.09.30
申请人 CHANNON, MATTHEW, JAMES 发明人 CHANNON, MATTHEW, JAMES
分类号 C01B33/00 主分类号 C01B33/00
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