| 摘要 |
<p>[Problem] To produce a photoelectric conversion element that can achieve a high photoelectric conversion efficiency with the diffusion of an n-type dopant into a light-absorbing layer comprising a CIGS compound semiconductor being easy and having an even and sufficient diffusion density. [Solution] This method for producing a photoelectric conversion element provided with a light-absorbing layer comprising a CIGS compound semiconductor subjects the light-absorbing layer (30) of a laminate (1A), which is formed from laminating a lower electrode (20) and the light-absorbing layer (30) on a substrate (10), to hole-formation processing for forming Cu holes (31) at the surface (30a) thereof, and then forms a p-n junction at the surface (30a) of the light-absorbing layer (30).</p> |
