SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

The objective of the present invention is to increase the voltage resistance performance of a vertical semiconductor device equipped with an aperture and provided with a channel formed by a two-dimensional electron gas at the aperture. The vertical semiconductor device is provided with a GaN-based laminate (15) to which an aperture (28) is provided, is provided with an n-type GaN drift layer (4), a p-type GaN barrier layer (6), and an n-type GaN contact layer (7), and is provided with: a re-grown layer (27) containing an electron donor layer (26) and an electron transit layer (22) in a manner so as to coat the aperture; a source electrode (S); and a gate electrode (G) positioned over the re-grown layer. The gate electrode (G) covers a portion corresponding to the thickness range of the p-type GaN barrier layer, and terminates at a position in the wall surface away from the bottom of the aperture.