| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress the maximum value of dispersion of a deletion time during operation of deleting a conductive bridge to shorten a time required for rewriting a memory device. <P>SOLUTION: A semiconductor device has a semiconductor element including: a first insulating film having a hole formed from a first surface toward inside in a thickness direction; a resistance change layer provided on the first insulating film and including a first ionic conductor; a first electrode formed in the hole so as to cover a lateral face and a bottom face of an inner wall of the hole and have a recessed part, and being in contact with the resistance change layer via an upper end; an implantation layer buried in the recessed part of the first electrode and having an electronic resistance larger than that of the first electrode; and a second electrode formed on the resistance change layer so as to sandwich the resistance change layer together with the upper end of the first electrode and the implantation layer. The semiconductor element changes an electronic resistance between the first electrode and the second electrode by forming a conductivity bridge reversibly between the upper end of the first electrode and the second electrode in the resistance change layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
