发明名称 SYSTEMS FOR FORMING SEMICONDUCTOR MATERIALS BY ATOMIC LAYER DEPOSITION
摘要 Methods of depositing a III-V semiconductor material on a substrate include sequentially introducing a gaseous precursor of a group III element and a gaseous precursor of a group V element to the substrate by altering spatial positioning of the substrate with respect to a plurality of gas columns. For example, the substrate may be moved relative to a plurality of substantially aligned gas columns, each disposing a different precursor. Thermalizing gas injectors for generating the precursors may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. Deposition systems for forming one or more III-V semiconductor materials on a surface of the substrate may include one or more such thermalizing gas injectors configured to direct the precursor to the substrate via the plurality of gas columns.
申请公布号 US2012118233(A1) 申请公布日期 2012.05.17
申请号 US201213357805 申请日期 2012.01.25
申请人 WERKHOVEN CHRISTIAAN J.;SOITEC 发明人 WERKHOVEN CHRISTIAAN J.
分类号 C23C16/455 主分类号 C23C16/455
代理机构 代理人
主权项
地址