发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of accurately and effectively forming patterns. <P>SOLUTION: A method of manufacturing a semiconductor device comprises steps of: forming a plurality of dummy line patterns 21c disposed at a first pitch on a ground region; forming closed loop-shaped mask patterns 25c that have predetermined mask portions formed on both long side surfaces of the dummy line patterns 21c and surround the dummy line patterns; removing the dummy line patterns 21c; removing the both sides of the mask patterns 25c to leave the predetermined mask portions; and etching the ground region by using the predetermined mask portions as a mask. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012094880(A) 申请公布日期 2012.05.17
申请号 JP20110266116 申请日期 2011.12.05
申请人 TOSHIBA CORP 发明人 KAMIGAKI TETSUYA;ITO EIJI;HASHIMOTO KOJI;KINOSHITA HIDEYUKI
分类号 H01L27/115;H01L21/28;H01L21/3213;H01L21/8247;H01L27/10;H01L29/788;H01L29/792 主分类号 H01L27/115
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