发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of accurately and effectively forming patterns. <P>SOLUTION: A method of manufacturing a semiconductor device comprises steps of: forming a plurality of dummy line patterns 21c disposed at a first pitch on a ground region; forming closed loop-shaped mask patterns 25c that have predetermined mask portions formed on both long side surfaces of the dummy line patterns 21c and surround the dummy line patterns; removing the dummy line patterns 21c; removing the both sides of the mask patterns 25c to leave the predetermined mask portions; and etching the ground region by using the predetermined mask portions as a mask. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012094880(A) |
申请公布日期 |
2012.05.17 |
申请号 |
JP20110266116 |
申请日期 |
2011.12.05 |
申请人 |
TOSHIBA CORP |
发明人 |
KAMIGAKI TETSUYA;ITO EIJI;HASHIMOTO KOJI;KINOSHITA HIDEYUKI |
分类号 |
H01L27/115;H01L21/28;H01L21/3213;H01L21/8247;H01L27/10;H01L29/788;H01L29/792 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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