| 摘要 |
The present invention provides an SRAM cell which does not have the constraints on the size of transistors in order to realize stabilized write and read operations, which has a fewer number of control signal lines per port, and which can be easily multi-ported in the read operation as well as the write operation so that the write and read operations can be performed through a single bit line. The SRAM cell includes a feedback control transistor for controlling connection or disconnection of a positive feedback circuit between particularly two inverters, a write control transistor and a read control transistor connected to a single bit line, and a read buffer transistor connected to the read control transistor.
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