SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves an excellent lengthwise withstand voltage and allows the reduction of a drain leak current when a transistor is working, and to provide a method of manufacturing the semiconductor device.

SOLUTION: The semiconductor device comprises: an n+ contact layer 8; a p-type barrier layer 6; an n-type drift layer 4; an opening 28 provided to extend from the n+ contact layer 8 through the p-type barrier layer 6 to the n-type drift layer 4; a regrowth layer 27 located to cover the p-type barrier layer 6 and the other layers exposed to the opening and including an undoped GaN channel layer 22 and a carrier-source layer 26; a dielectric film 9 located to cover the regrowth layer 27; and a gate electrode G located on the dielectric film 9. In the p-type barrier layer, a magnesium density A(cm-3) and a hydrogen density B(cm-3) meet the following condition (1): 0.1COPYRIGHT: (C)2012,JPO&INPIT