发明名称 |
METAL PRECURSORS FOR DEPOSITION OF METAL-CONTAINING FILMS |
摘要 |
Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-&bgr;-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate. |
申请公布号 |
US2012122313(A1) |
申请公布日期 |
2012.05.17 |
申请号 |
US201113293878 |
申请日期 |
2011.11.10 |
申请人 |
DUSSARRAT CHRISTIAN;LANSALOT-MATRAS CLEMENT;OMARJEE VINCENT M.;HSIAO CHENG-FANG;AMERICAN AIR LIQUIDE, INC.;L'AIR LIQUIDE SOCIETE ANONYME POUR I'ETUDE ET I'EXPLOITATION DES PROCEDES GEORGES CLAUDE |
发明人 |
DUSSARRAT CHRISTIAN;LANSALOT-MATRAS CLEMENT;OMARJEE VINCENT M.;HSIAO CHENG-FANG |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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地址 |
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