发明名称 |
ANTIFUSE STRUCTURE FOR IN LINE CIRCUIT MODIFICATION |
摘要 |
An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material. |
申请公布号 |
US2012122280(A1) |
申请公布日期 |
2012.05.17 |
申请号 |
US201213360203 |
申请日期 |
2012.01.27 |
申请人 |
KANE TERENCE L.;TENNEY MICHAEL P.;WANG YUN-YU;WONG KEITH KWONG HON;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KANE TERENCE L.;TENNEY MICHAEL P.;WANG YUN-YU;WONG KEITH KWONG HON |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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