| 摘要 |
A semiconductor device includes isolation layers arranged in a memory array region and a monitoring region, wherein the isolation layers are positioned in parallel; gate lines arranged to cross the isolation layers in the memory array region, wherein the gate lines are formed in the memory array region; dummy gate lines arranged in a substantially same direction as the isolation layers in the monitoring region, wherein the dummy gate lines are formed in the monitoring region; monitoring junctions arranged between the dummy gate lines and in a substantially same direction as the dummy gate lines, wherein the monitoring junctions are arranged in the monitoring region; and spacers arranged on sidewalls of each of the gate lines and the dummy gate lines, wherein at least one of the monitoring junctions is covered by any one of the spacers.
|
