| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of reducing occurence of device failures and preventing chip or crack of a semiconductor wafer. <P>SOLUTION: There is provided a method for manufacturing a semiconductor device, in which a semiconductor wafer 1 is immersed into a treatment solution such as an etching liquid and a cleaning liquid. In the method, the semiconductor wafer 1 is reduced in thickness, and all or a part of an outer peripheral end part 2 of the semiconductor wafer 1 reduced in thickness is coated with a resin film 3. In this case, the resin film 3 may be locally increased in thickness, and may be locally increased in width. The resin film 3 has a specific gravity greater than that of the treatment solution. The plurality of semiconductor wafers 1 having the coated outer peripheral end parts 2 are then vertically placed in a carrier, and the semiconductor wafers 1 are then immersed together with the carrier into a chemical liquid tank filled with the treatment solution to simultaneously immerse the plurality of semiconductor wafers 1 in the treatment solution. <P>COPYRIGHT: (C)2012,JPO&INPIT |
