发明名称 Dielectric Thin Film Element and Method for Producing the Same
摘要 A dielectric thin film element that includes a substrate, a close-adhesion layer formed on one principal surface of the substrate, a capacitance section having a lower electrode layer formed on the close-adhesion layer, a dielectric layer formed on the lower electrode layer, and an upper electrode layer formed on the dielectric layer, and a protective layer formed to cover the capacitance section, wherein the end of the close-adhesion layer is exposed from the protective layer.
申请公布号 US2012119328(A1) 申请公布日期 2012.05.17
申请号 US201213353702 申请日期 2012.01.19
申请人 NAKAISO TOSHIYUKI;MURATA MANUFACTURING CO., LTD. 发明人 NAKAISO TOSHIYUKI
分类号 H01L29/92;H01L21/02 主分类号 H01L29/92
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