发明名称 |
Thin film transistor including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same |
摘要 |
A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer. |
申请公布号 |
US8178884(B2) |
申请公布日期 |
2012.05.15 |
申请号 |
US20090393422 |
申请日期 |
2009.02.26 |
申请人 |
HA JAE-HEUNG;SONG YOUNG-WOO;LEE JONG-HYUK;JEONG JONG-HAN;KIM MIN-KYU;MO YEON-GON;JEONG JAE-KYEONG;CHUNG HYUN-JOONG;KIM KWANG-SUK;YANG HUI-WON;CHOI CHAUN-GI;SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
HA JAE-HEUNG;SONG YOUNG-WOO;LEE JONG-HYUK;JEONG JONG-HAN;KIM MIN-KYU;MO YEON-GON;JEONG JAE-KYEONG;CHUNG HYUN-JOONG;KIM KWANG-SUK;YANG HUI-WON;CHOI CHAUN-GI |
分类号 |
H01L29/04;H01L29/10;H01L29/12;H01L29/15;H01L29/26;H01L29/76;H01L31/036;H01L31/0376;H01L31/062;H01L31/112;H01L31/113;H01L31/12;H01L31/20;H01L33/00 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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