发明名称 |
Testing method of surface-emitting laser device and testing device thereof |
摘要 |
A method of performing a wafer level burn-in test for a plurality of surface-emitting laser devices formed on a wafer includes causing a plurality of contact electrodes arranged in a same plane with a pitch same as that of the surface-emitting laser devices being electrically connected to each other to have contact with pad electrodes of the surface-emitting laser devices, respectively, and applying a current to second electrodes of the surface-emitting laser devices and the contact electrodes. The wafer level burn-in test is performed while heating the wafer at a predetermined temperature. Laser lights emitted from the surface-emitting laser devices are monitored during the wafer level burn-in test. |
申请公布号 |
US8178364(B2) |
申请公布日期 |
2012.05.15 |
申请号 |
US20100796225 |
申请日期 |
2010.06.08 |
申请人 |
HIRAIWA KOJI;KAGEYAMA TAKEO;IWAI NORIHIRO;TAKAKI KEISHI;FURUKAWA ELECTRIC CO., LTD. |
发明人 |
HIRAIWA KOJI;KAGEYAMA TAKEO;IWAI NORIHIRO;TAKAKI KEISHI |
分类号 |
H01L21/66;G01R31/10;G01R31/26;H01L23/58 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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