发明名称 Testing method of surface-emitting laser device and testing device thereof
摘要 A method of performing a wafer level burn-in test for a plurality of surface-emitting laser devices formed on a wafer includes causing a plurality of contact electrodes arranged in a same plane with a pitch same as that of the surface-emitting laser devices being electrically connected to each other to have contact with pad electrodes of the surface-emitting laser devices, respectively, and applying a current to second electrodes of the surface-emitting laser devices and the contact electrodes. The wafer level burn-in test is performed while heating the wafer at a predetermined temperature. Laser lights emitted from the surface-emitting laser devices are monitored during the wafer level burn-in test.
申请公布号 US8178364(B2) 申请公布日期 2012.05.15
申请号 US20100796225 申请日期 2010.06.08
申请人 HIRAIWA KOJI;KAGEYAMA TAKEO;IWAI NORIHIRO;TAKAKI KEISHI;FURUKAWA ELECTRIC CO., LTD. 发明人 HIRAIWA KOJI;KAGEYAMA TAKEO;IWAI NORIHIRO;TAKAKI KEISHI
分类号 H01L21/66;G01R31/10;G01R31/26;H01L23/58 主分类号 H01L21/66
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