| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent a bridge defect between a gate electrode and a conductive pattern by forming a conductive layer with a growing process instead of a deposition process. A plurality of pillar patterns are formed on an upper surface of a substrate(21). The pillar patterns include pillar heads(23) and a pillar necks(25). A gate insulating layer(26) is formed to cover the pillar necks. A conductive layer is grown to fill up a gap between the pillar patterns by performing a growth process. An etch back process for the conductive layer is performed to form a gate electrode for covering the pillar necks.
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