Method for forming a recess array device structure in a semiconductor substrate

摘要

The present invention relates to a method for forming a recess array device structure in a semiconductor substrate. The method includes the steps of: providing a base material including a semiconductor substrate and a first material; forming a plurality of second recesses on the semiconductor substrate; forming a second material in the second recesses; forming a metal layer on the second material and the base material, wherein the metal layer includes a first portion and a second portion; removing the second portion to form a plurality of metal layer openings; to and etching the base material according to the metal layer openings so as to form a plurality of third recesses. Accordingly, the metal layer can overcome the non-selectivity issue during the etching process.