发明名称 System and method for photolithography in semiconductor manufacturing
摘要 A method for producing a pattern on a substrate includes providing at least one exposure of the pattern onto a layer of the substrate by a higher-precision lithography mechanism and providing at least one exposure of the pattern onto a layer of the substrate by a lower-precision lithography mechanism. The exposures can be done in either order, and additional exposures can be included. The higher-precision lithography mechanism can be immersion lithography and the lower-precision lithography mechanism can be dry lithography.
申请公布号 US8178289(B2) 申请公布日期 2012.05.15
申请号 US20090362316 申请日期 2009.01.29
申请人 CHEN KUEI SHUN;LIN CHIN-HSIANG;LU DAVID DING-CHUNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHEN KUEI SHUN;LIN CHIN-HSIANG;LU DAVID DING-CHUNG
分类号 G03F7/20;G03F7/26 主分类号 G03F7/20
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