发明名称 ESD power clamp for high-voltage applications
摘要 An ESD clamp includes a first power supply node; an ESD detection circuit coupled to the first power supply node and configured to detect an ESD event; and a bias circuit coupled to the first power supply node and configured to output a second power supply voltage to a second power supply node. The second power supply voltage is lower than a first power supply voltage on the first power supply node. The ESD detection circuit is configured to activate the bias circuit to change working state in response to the ESD event. The ESD clamp further includes an LV ESD clamp coupled to the second power supply node, wherein the LV ESD clamp includes LV devices with maximum endurable voltages lower than the first power supply voltage.
申请公布号 US8179647(B2) 申请公布日期 2012.05.15
申请号 US20100897585 申请日期 2010.10.04
申请人 CHU FANG-TSUN;CHEN KUO-JI;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHU FANG-TSUN;CHEN KUO-JI
分类号 H02H9/00;H01C7/12;H02H1/00;H02H1/04;H02H3/22;H02H9/06 主分类号 H02H9/00
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