发明名称 Interfacial architecture for nanostructured optoelectronic devices
摘要 An optoelectronic apparatus, a method for making the apparatus, and the use of the apparatus in an optoelectronic device are disclosed. The apparatus may include an active layer having a nanostructured network layer with a network of regularly spaced structures with spaces between neighboring structures. One or more network-filling materials are disposed in the spaces. At least one of the network-filling materials has complementary charge transfer properties with respect to the nanostructured network layer. An interfacial layer, configured to enhance an efficiency of the active layer, is disposed between the nanostructured network layer and the network-filling materials. The interfacial layer may be configured to provide (a) charge transfer between the two materials that exhibits different rates for forward versus backward transport; (b) differential light absorption to extend a range of wavelengths that the active layer can absorb; or (c) enhanced light absorption, which may be coupled with charge injection.
申请公布号 US8178384(B1) 申请公布日期 2012.05.15
申请号 US20090401238 申请日期 2009.03.10
申请人 ROSCHEISEN MARTIN R.;SAGER BRIAN M.;PETRITSCH KLAUS;FIDANZA JACQUELINE;NANOSOLAR, INC. 发明人 ROSCHEISEN MARTIN R.;SAGER BRIAN M.;PETRITSCH KLAUS;FIDANZA JACQUELINE
分类号 H01L21/00 主分类号 H01L21/00
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