发明名称 |
METHOD OF FABRICATING DAMASCENE STRUCTURES |
摘要 |
Method of forming wires in integrated circuits. The methods include forming a wire in a first dielectric layer on a substrate; forming a dielectric barrier layer over the wire and the first dielectric layer; forming a second dielectric layer over the barrier layer; forming one or more patterned photoresist layers over the second dielectric layer; performing a reactive ion etch to etch a trench through the second dielectric layer and not through the barrier layer; performing a second reactive ion etch to extend the trench through the barrier layer; and after performing the second reaction ion etch, removing the one or more patterned photoresist layers, a last formed patterned photoresist layer removed using a reducing plasma or a non-oxidizing plasma. The methods include forming wires by similar methods to a metal-insulator-metal capacitor. |
申请公布号 |
US2012115303(A1) |
申请公布日期 |
2012.05.10 |
申请号 |
US201213354371 |
申请日期 |
2012.01.20 |
申请人 |
GAMBINO JEFFREY P.;LINDGREN PETER J.;STAMPER ANTHONY K.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GAMBINO JEFFREY P.;LINDGREN PETER J.;STAMPER ANTHONY K. |
分类号 |
H01L21/4763;H01L21/02 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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