发明名称 SELF-ALIGNED INDEX GUIDE TYPE BURIED HETEROSTRUCTURE NITRIDE LASER STRUCTURE
摘要 <P>PROBLEM TO BE SOLVED: To provide a laser diode having a stronger mode stability and a low threshold current operation. <P>SOLUTION: The index guide type heterostructure nitride laser structure 100 has a first waveguide layer, a second waveguide layer, a multiple quantum well structure 145 interposed between the first and second waveguide layers, a ridge structure 111 having first, second and third faces, and a buried layer 155 existing on the first, second and third faces of the ridge structure 111. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012089894(A) 申请公布日期 2012.05.10
申请号 JP20120022806 申请日期 2012.02.06
申请人 XEROX CORP 发明人 DAVID P BAUER;KNEISSL MICHAEL A;LINDA T ROMANO;PAOLI THOMAS L;VAN DE WALLE CHRISTIAN G
分类号 H01S5/227;H01S5/343;H01S5/22;H01S5/32;H01S5/323 主分类号 H01S5/227
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