| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a support ring for supporting a semiconductor wafer composed of monocrystalline silicon during a thermal treatment, a method for the thermal treatment of the semiconductor wafer, and a thermally treated semiconductor wafer composed of monocrystalline silicon. <P>SOLUTION: The support ring for supporting a semiconductor wafer composed of monocrystalline silicon during a thermal treatment of the semiconductor wafer includes outer and inner lateral surfaces and a curved surface extending from the outer lateral surface to the inner lateral surface to serve for the placement of the semiconductor wafer, and the curved surface has a radius of curvature of not less than 6,000 mm and not more than 9,000 mm if designed for the placement of a 300 mm diameter semiconductor wafer, or a radius of curvature of not less than 9,000 mm and not more than 14,000 mm if designed for the placement of a 450 mm diameter semiconductor wafer. The method for the thermal treatment of the semiconductor wafer and the thermally treated semiconductor wafer composed of monocrystalline silicon are also provided. <P>COPYRIGHT: (C)2012,JPO&INPIT |
