发明名称 SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS AND METHOD
摘要 A sealing member is lifted to cause its edge to be in contact with a contact surface of a support member. In the state where a precision ejection nozzle is isolated, a gas exhaust unit is operated to exhaust the inside of a chamber to reduce the pressure in the chamber to a predetermined level. Then, a purge gas is introduced into the chamber from a purge gas supply source through a gas introduction section to replace the atmosphere in the chamber with the purge gas, and the pressure in the chamber is returned to the atmospheric pressure. After that, the sealing member is lowered to release the isolation of the precision ejection nozzle. Then, liquid droplets of a liquid device material are ejected toward the surface of a substrate while a carriage is reciprocated in the X direction.
申请公布号 US2012115313(A1) 申请公布日期 2012.05.10
申请号 US201213354624 申请日期 2012.01.20
申请人 SATO HIROSHI;TOKYO ELECTRON LIMITED 发明人 SATO HIROSHI
分类号 H01L21/208 主分类号 H01L21/208
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