发明名称 |
MANUFACTURING METHOD FOR METAL OXIDE SEMICONDUCTOR MATERIAL FOR GAS SENSOR |
摘要 |
Provided is a manufacturing method of a metal oxide semiconductor material for gas sensors by which an oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. The manufacturing process implements a precursor solution synthesis step 1 of synthesizing an oxide precursor solution in which an oxide precursor is dispersed, a pH adjustment step 3 of adjusting the pH of the oxide precursor solution, a precursor-colloid dispersion preparation step 5 of preparing an oxide precursor-noble metal colloid dispersion in which the oxide precursor and the noble metal colloid are dispersed substantially uniformly, a purifying step 7 of purifying the oxide precursor-noble metal colloid dispersion to obtain a purified oxide precursor noble metal colloid dispersion, and a freeze-drying step 11 of freeze-drying an precipitate of the purified oxide precursor-noble metal colloid dispersion. |
申请公布号 |
US2012112137(A1) |
申请公布日期 |
2012.05.10 |
申请号 |
US200913060886 |
申请日期 |
2009.08.28 |
申请人 |
IMAMURA TETSUJI;KUWAHARA DAISUKE;NAKANO TAKAYUKI;ISHIBASHI TAKAHIRO;HOKURIKU ELECTRIC INDUSTRY CO., LTD. |
发明人 |
IMAMURA TETSUJI;KUWAHARA DAISUKE;NAKANO TAKAYUKI;ISHIBASHI TAKAHIRO |
分类号 |
H01B1/02 |
主分类号 |
H01B1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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