| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride compound semiconductor chip capable of accurately cutting a wafer in good yield. <P>SOLUTION: A manufacturing method of a nitride compound semiconductor chip for separating a wafer on which a nitride compound semiconductor is laminated on a GaN substrate into chips comprises: a step of polishing the GaN substrate so that the thickness becomes greater than or equal to 100 μm and less than or equal to 210 μm and a step of cutting the wafer from the side on which the nitride compound semiconductor is laminated with a cutter with the condition that the angle of a central axis of the cutter for the wafer is greater than 60° and less than 75° and the push-in depth of the cutter is 15% or below of the thickness of the GaN substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
