发明名称 |
Semiconductor Device and Method of Forming Stepped Interconnect Layer for Stacked Semiconductor Die |
摘要 |
A semiconductor die has a first semiconductor die mounted to a carrier. A plurality of conductive pillars is formed over the carrier around the first die. An encapsulant is deposited over the first die and conductive pillars. A first stepped interconnect layer is formed over a first surface of the encapsulant and first die. The first stepped interconnect layer has a first opening. A second stepped interconnect layer is formed over the first stepped interconnect layer. The second stepped interconnect layer has a second opening. The carrier is removed. A build-up interconnect structure is formed over a second surface of the encapsulant and first die. A second semiconductor die over the first semiconductor die and partially within the first opening. A third semiconductor die is mounted over the second die and partially within the second opening. A fourth semiconductor die is mounted over the second stepped interconnect layer.
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申请公布号 |
US2012112355(A1) |
申请公布日期 |
2012.05.10 |
申请号 |
US201213350299 |
申请日期 |
2012.01.13 |
申请人 |
PAGAILA REZA A.;DO BYUNG TAI;CHUA LINDA PEI EE;STATS CHIPPAC, LTD. |
发明人 |
PAGAILA REZA A.;DO BYUNG TAI;CHUA LINDA PEI EE |
分类号 |
H01L23/48;H01L21/56 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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