Verfahren zum pyrolytischen Abscheiden von kristallinem,vorzugsweise einkristallinem Silicium

摘要

Crystalline silicon is deposited on a heated crystalline silicon support by thermal decomposition of a reaction gas containing a gaseous silicon compound, hydrogen and a chemically inert permanent gas, wherein the molar ratios of silicon compound to hydrogen is 0.2-2.0 and hydrogen to permanent gas is 0.1-3.0. The deposited silicon may be monocrystalline or polycrystalline. The support can be monocrystalline silicon. The permanent gas can be N2 or Af. Heating can be up to 1200 DEG C. in N2 or higher if Af is used. The silicon compound can be SiHCl3. The deposited silicon can be doped to give a doping either the same as or different from that of the carrier. The amount of doping substance present in the reaction gas can be varied during deposition. Deposited polycrystalline silicon can be converted to the monocrystalline form by zone melting.