| 摘要 |
PURPOSE: A complementary metal oxide semiconductor(CMOS) image sensor manufacturing method is provided to proceed a light box formation process by a dry-etching process, a doping process, and a wet-etching process without solely using the dry-etching process, thereby minimizing etching damage due to plasma. CONSTITUTION: A gate(42) of a transistor is formed in the upper part of a substrate(41). A photo diode(43) is arranged within the substrate. An inter-layer insulating film(44) is arranged on the upper part of the substrate including the gate. A first metal wiring(45) is arranged on the inter-layer insulating film. A first inter-metal insulating film(46), a second metal wiring(47), and a second inter-metal insulating film(48) are arranged on the first metal wiring.
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