| 发明名称 |
ESD PROTECTION USING DIODE-ISOLATED GATE-GROUNDED NMOS WITH DIODE STRING |
| 摘要 |
An ESD protection circuit with a diode string coupled to a diode-isolated, gate-grounded NMOS ESD device. A method of forming an ESD protection circuit with a diode string coupled to a diode-isolated, gate-grounded NMOS ESD device. |
| 申请公布号 |
US2012112286(A1) |
申请公布日期 |
2012.05.10 |
| 申请号 |
US201113288507 |
申请日期 |
2011.11.03 |
| 申请人 |
POK PONNARITH;SCHULMEYER KYLE;CLINE ROGER A.;DUVVURY CHARVAKA;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
POK PONNARITH;SCHULMEYER KYLE;CLINE ROGER A.;DUVVURY CHARVAKA |
| 分类号 |
H01L27/06;H01L21/328 |
主分类号 |
H01L27/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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