| 摘要 |
<P>PROBLEM TO BE SOLVED: To uniformize distribution of a current in a semiconductor device without changing a size of a switching cell. <P>SOLUTION: A semiconductor device 1 has a plurality of Insulated Gate Bipolar Transistor (IGBT) cells 10 which are insulation gate type switching cells. A gate-emitter voltage Vge is applied to gate electrodes 20 of the respective IGBT cells 10 to flow a collector-emitter current Ice in response to the gate-emitter voltage Vge in an emitter electrode 22 provided commonly so as to cover the respective IGBT cells 10. A bonding wire 32 is bonded to the emitter electrode 22. A coefficient Kp related to a mutual inductance of each IGBT cell 10 is changed depending on the gate-emitter voltage Vge of each IGBT cell 10, which has a difference caused by a distance from a junction part 34 which is a bonding position of the bonding wire 32, to equalize the respective collector-emitter currents Ice of the IGBT cells 10 substantially. <P>COPYRIGHT: (C)2012,JPO&INPIT |
