发明名称 NANOSCALE ELECTRONIC DEVICE
摘要 One example of the present invention is a nanoscale electronic device comprising a first conductive electrode, a second conductive electrode, and an anisotropic dielectric material layered between the first and second electrodes having a permittivity in a direction approximately that of the shortest distance between the first and second electrodes less than the permittivity in other directions within the anisotropic dielectric material. Additional examples of the present invention include integrated circuits that contain multiple nanoscale electronic devices that each includes an anisotropic dielectric material layered between first and second electrodes having a permittivity in a direction approximately that of the shortest distance between the first and second electrodes less than the permittivity in other directions within the anisotropic dielectric material.
申请公布号 US2012112167(A1) 申请公布日期 2012.05.10
申请号 US20100942131 申请日期 2010.11.09
申请人 RIBEIRO GILBERTO MEDAIROS;KUEKES PHILIP J.;BRATKOVSKI ALEXANDRE M.;NICKEL JANICE H. 发明人 RIBEIRO GILBERTO MEDAIROS;KUEKES PHILIP J.;BRATKOVSKI ALEXANDRE M.;NICKEL JANICE H.
分类号 H01L49/02;B82Y40/00;B82Y99/00;H01L49/00 主分类号 H01L49/02
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