发明名称 |
Thin film forming method for light emitting devices |
摘要 |
Measure of forming an EL layer by selectively depositing through evaporation a material for forming the EL layer at a desired location is provided. When a material for forming an EL layer is deposited, a mask (113) is provided between a sample boat (111) and a substrate (110). By applying voltage to the mask (113), the direction of progress of the material for forming the EL layer is controlled to be selectively deposited at a desired location. <IMAGE> <IMAGE> |
申请公布号 |
EP1132980(B1) |
申请公布日期 |
2012.05.09 |
申请号 |
EP20010104265 |
申请日期 |
2001.02.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;HIROKI, MASAAKI;ISHIMARU, NORIKO |
分类号 |
H01L51/40;H05B33/10;C23C14/04;H01L27/32;H01L51/00;H01L51/30 |
主分类号 |
H01L51/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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