发明名称 Thin film forming method for light emitting devices
摘要 Measure of forming an EL layer by selectively depositing through evaporation a material for forming the EL layer at a desired location is provided. When a material for forming an EL layer is deposited, a mask (113) is provided between a sample boat (111) and a substrate (110). By applying voltage to the mask (113), the direction of progress of the material for forming the EL layer is controlled to be selectively deposited at a desired location. <IMAGE> <IMAGE>
申请公布号 EP1132980(B1) 申请公布日期 2012.05.09
申请号 EP20010104265 申请日期 2001.02.22
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI;HIROKI, MASAAKI;ISHIMARU, NORIKO
分类号 H01L51/40;H05B33/10;C23C14/04;H01L27/32;H01L51/00;H01L51/30 主分类号 H01L51/40
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