| 摘要 |
The invention is related to a method for forming a floating gate memory structure, wherein the floating gates are made from monocrystalline semiconductor material, epitaxially grown on a monocrystalline substrate, through selective epitaxial growth, laterally grown over a layer of tunnel oxide. According to the invention, the tunnel oxide layer is protected by a protection layer, during the cleaning of the substrate. In this way, the control of the thickness of the tunnel oxide layer is ensured. The invention is also related to a method for forming a floating gate memory structure wherein columnarshaped floating gate structures are produced, provided with thermally grown oxide layers on their lateral sides. |
