| 摘要 |
<p>PURPOSE: A fine pattern formation method of a semiconductor device is provided to arrange a uniform fine pattern by etching a to-be-etched layer formed on the lower part using a hard mask film as an etching barrier. CONSTITUTION: A sacrificial film is formed by successively laminating a first sacrificial film and a second sacrificial film on a substrate(21). A sacrificial film pattern has a line width of a second sacrificial film pattern(24B) which is wider than a first sacrificial film pattern(23A). A spacer is formed along the front surface of the substrate which includes the sacrificial film pattern. A spacer pattern is formed by etching the front surface of the spacer. The sacrificial film pattern is removed. A hard mask film is etched using the spacer pattern as an etching barrier.</p> |
