METEOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device manufacturing method is provided to minimize a condensation phenomenon by forming a metal oxide before forming a sacrificial film. CONSTITUTION: A metal oxide and a sacrificial film are formed on a substrate(31) which includes silicon. A metal film is formed by reducing the metal oxide through a first heat treatment process. A metal silicide film(37) is formed by reacting the metal film and the silicon through a second heat treatment process(204). The substrate comprises a silicon film or a silicon-germanium film.