发明名称 |
SOLID-STATE IMAGE SENSING DEVICE CONTAINING ELECTRON MULTIPLICATION FUNCTION |
摘要 |
In a solid state imaging device with an electron multiplying function, in a section normal to an electron transfer direction of a multiplication register EM, an insulating layer 2 is thicker at both side portions than in a central region. A pair of overflow drains 1N is formed at a boundary between a central region and both side portions of an N-type semiconductor region 1C. Each overflow drain 1N extends along the electron transfer direction of the multiplication register EM. Overflow gate electrodes G extend from the thin portion to the thick portion of the insulating layer 2. The overflow gate electrodes G are disposed between both ends of each transfer electrode 8 in a longitudinal direction and the insulating layer 2, and they also function as shield electrodes for each electrode 8 (8A and 8B). |
申请公布号 |
EP2264766(B1) |
申请公布日期 |
2012.05.09 |
申请号 |
EP20100735832 |
申请日期 |
2010.01.27 |
申请人 |
HAMAMATSU PHOTONICS K.K. |
发明人 |
SUZUKI HISANORI;YONETA YASUHITO;TAKAGI SHIN-ICHIRO;MAETA KENTARO;MURAMATSU MASAHARU |
分类号 |
H01L27/148;H04N5/335;H04N5/341;H04N5/369;H04N5/372 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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