| 摘要 |
A method of fabricating a memory cell includes following steps. First, a substrate is provided, and a control gate is formed on the substrate. Then, a dielectric layer is formed to cover the control gate and the substrate. Afterward, an α-SiGe layer is formed on the dielectric layer. After that, a laser annealing process is performed to oxidize the α-SiGe layer into a silicon oxide layer, so as to separate out Ge atoms from the α-SiGe layer to form a Ge quantum dot layer between the silicon oxide layer and the dielectric layer. A poly-Si island is then formed on the silicon oxide layer, wherein the poly-Si island includes a source doped region, a drain doped region, and a channel region located therebetween. |
